Researchers are turning to gallium nitride for high-temperature applications such as DOI: 10.1063/5.0191297
This work was funded, in part, by the U.S. Air Force Office of Scientific Research, Lockheed Martin Corporation, the Semiconductor Research Corporation through the U.S. Defense Advanced Research Projects Agency, the U.S. Department of Energy, Intel Corporation, and the Bangladesh University of Engineering and Technology.
Fabrication and microscopy were conducted at MIT.nano, the Semiconductor Epitaxy and Analysis Laboratory at Ohio State University, the Center for Advanced Materials Characterization at the